(Hong Kong)
Product Summary
The LH5P8129N-80 is a 4M x 16bit CMOS Dynamic RAM. It is fabricated using silicon-gate CMOS process technology. This device has a built-in oscillator, which makes it easy to refresh memories without external clocks.
Parametrics
LH5P8129N-80 absolute maximum ratings: (1)Applied voltage on any pins: -1.0 to +7.0 V; (2)Output short circuit current: 50 mA; (3)Storage Temperature: -65 to +150 °C; (4)Power Dissipation: 600 mW; (5)Operating temperature: 0 to +70 °C.
Features
LH5P8129N-80 features: (1)131,072 x 8 bit organization; (2)Access times (MAX.): 60/80/100 ns; (3)Cycle times (MIN.): 100/130/160 ns; (4)Single +5 V power supply; (5)Pin compatible with 1M standard SRAM; (6)Power consumption: Operating: 572/385/275 mW (MAX.), Standby (TTL level): 5.5 mW (MAX.) and Standby (CMOS level): 1.1 mW (MAX.); (7)TTL compatible I/O; (8)Available for auto-refresh and self-refresh modes; (9)512 refresh cycles/8 ms.
Diagrams
